Invention Grant
US09054029B2 Memory devices with magnetic random access memory (MRAM) cells and associated structures for connecting the MRAM cells
有权
具有磁性随机存取存储器（MRAM）单元和用于连接MRAM单元的相关结构的存储器件
- Patent Title: Memory devices with magnetic random access memory (MRAM) cells and associated structures for connecting the MRAM cells
- Patent Title (中): 具有磁性随机存取存储器（MRAM）单元和用于连接MRAM单元的相关结构的存储器件
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Application No.: US14468234Application Date: 2014-08-25
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Publication No.: US09054029B2Publication Date: 2015-06-09
- Inventor: Neal Berger , Mourad El Baraji , Amitay Levi
- Applicant: Crocus Technology Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Crocus Technology Inc.
- Current Assignee: Crocus Technology Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Cooley LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L29/82 ; G11C11/16 ; H01L23/522 ; H01L23/528
Abstract:
A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.
Public/Granted literature
Information query
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