Invention Grant
US09054044B2 Method for forming a semiconductor device and semiconductor device structures
有权
用于形成半导体器件和半导体器件结构的方法
- Patent Title: Method for forming a semiconductor device and semiconductor device structures
- Patent Title (中): 用于形成半导体器件和半导体器件结构的方法
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Application No.: US13788719Application Date: 2013-03-07
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Publication No.: US09054044B2Publication Date: 2015-06-09
- Inventor: Stefan Flachowsky , Jan Hoentschel , Ralf Richter , Peter Javorka
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/308 ; H01L29/78 ; H01L29/66
Abstract:
Semiconductor device structures and methods for forming a semiconductor device are provided. In embodiments, one or more fins are provided, each of the one or more fins having a lower portion and an upper portion disposed on the lower portion. The lower portion is embedded in a first insulating material. The shape of the upper portion is at least one of a substantially triangular shape and a substantially rounded shape and a substantially trapezoidal shape. Furthermore, a layer of a second insulating material different from the first insulating material is formed on the upper portion.
Public/Granted literature
- US20140252557A1 METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2014-09-11
Information query
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