Invention Grant
- Patent Title: NH3 containing plasma nitridation of a layer on a substrate
- Patent Title (中): NH 3含有在衬底上的层的等离子体氮化
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Application No.: US13541941Application Date: 2012-07-05
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Publication No.: US09054048B2Publication Date: 2015-06-09
- Inventor: Wei Liu , Malcolm J. Bevan , Christopher S. Olsen , Johanes Swenberg
- Applicant: Wei Liu , Malcolm J. Bevan , Christopher S. Olsen , Johanes Swenberg
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/3105 ; H01L21/02
Abstract:
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes exposing a first layer of a substrate to a plasma formed from a process gas comprising predominantly a mixture of ammonia (NH3) and a noble gas, wherein ammonia is about 0.5 to about 15 percent of the process gas; and maintaining the process chamber at a pressure of about 10 mTorr to about 80 mTorr while exposing the first layer to the plasma to transform at least an upper portion of the first layer into a nitrogen-containing layer.
Public/Granted literature
- US20130012032A1 NH3 CONTAINING PLASMA NITRIDATION OF A LAYER ON A SUBSTRATE Public/Granted day:2013-01-10
Information query
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