Invention Grant
- Patent Title: Chip diode and diode package
- Patent Title (中): 芯片二极管和二极管封装
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Application No.: US14349901Application Date: 2012-10-16
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Publication No.: US09054072B2Publication Date: 2015-06-09
- Inventor: Hiroki Yamamoto
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-227964 20111017; JP2011-270253 20111209; JP2012-060557 20120316; JP2012-060558 20120316; JP2012060559 20120316; JP2012-086784 20120405; JP2012-148862 20120702; JP2012-149732 20120703; JP2012-149733 20120703; JP2012-149734 20120703; JP2012-217882 20120928
- International Application: PCT/JP2012/076684 WO 20121016
- International Announcement: WO2013/058232 WO 20130425
- Main IPC: H01L31/112
- IPC: H01L31/112 ; H01L31/113 ; H01L29/00 ; H01L21/331 ; H01L29/417 ; H01L23/495 ; H01L23/522 ; H01L29/861 ; H01L29/866 ; H01L29/872 ; H01L49/02 ; H01L27/06 ; H01L23/544 ; H01L29/06 ; H01L23/31 ; H01L27/02 ; H01L23/00

Abstract:
[Theme] To provide a chip diode, with which a p-n junction formed on a semiconductor layer can be prevented from being destroyed and fluctuations in characteristics can be suppressed even when a large stress is applied to a pad for electrical connection with the exterior, and a diode package that includes the chip diode.[Solution] A chip diode 15 includes an epitaxial layer 21 with a p-n junction 28, constituting a diode element 29, formed therein, an anode electrode 34 disposed along a top surface 22 of the epitaxial layer 21, electrically connected to a diode impurity region 23, which is the p-side pole of the p-n junction 28, and having a pad 37 for electrical connection with the exterior, and a cathode electrode 41 electrically connected to the epitaxial layer 21, which is the n-side pole of the p-n junction 28, and the pad 37 is provided at a position separated from a position directly above the p-n junction 28.
Public/Granted literature
- US20140284754A1 CHIP DIODE AND DIODE PACKAGE Public/Granted day:2014-09-25
Information query
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