Invention Grant
US09054081B2 Semiconductor device having through-substrate via with insulating portion
有权
具有绝缘部分的贯通基板通路的半导体装置
- Patent Title: Semiconductor device having through-substrate via with insulating portion
- Patent Title (中): 具有绝缘部分的贯通基板通路的半导体装置
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Application No.: US13560085Application Date: 2012-07-27
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Publication No.: US09054081B2Publication Date: 2015-06-09
- Inventor: Nobuyuki Nakamura , Takuyuki Muramoto , Takeo Tsukamoto
- Applicant: Nobuyuki Nakamura , Takuyuki Muramoto , Takeo Tsukamoto
- Applicant Address: LU Luxembourg
- Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-164045 20110727
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L25/065
Abstract:
A semiconductor device includes an isolation portion penetrating a semiconductor substrate from a first surface to a second surface positioned opposite the first surface. The isolation portion includes a first insulating film and a second insulating film. The first insulating film has a slit portion at a side of the first surface and the slit portion is buried with the second insulating film. The semiconductor device further includes an electrode penetrating the semiconductor substrate that is surrounded by the isolation portion.
Public/Granted literature
- US20130026599A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-31
Information query
IPC分类:
