Invention Grant
- Patent Title: Multi-dimensional integrated circuit structures and methods of forming the same
- Patent Title (中): 多维集成电路结构及其形成方法
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Application No.: US14169799Application Date: 2014-01-31
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Publication No.: US09054101B2Publication Date: 2015-06-09
- Inventor: Mark Semmelmeyer , Sandeep Kumar Goel
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L25/00 ; H01L25/065 ; H01L23/31 ; H01L21/56 ; H01L21/66 ; H01L23/00 ; H01L23/538
Abstract:
An embodiment is method comprising attaching a first die and a second die to a first surface of a first interposer using respective ones of first conductive connectors coupled to respective first surfaces of the first die and the second die; attaching a third die and a fourth die to a second surface of the first interposer using respective ones of second conductive connectors, the second surface of the first interposer being opposite the first surface of the interposer; and attaching the first die and the second die to a substrate using respective ones of third conductive connectors coupled to respective second surfaces of the first die and the second die.
Public/Granted literature
- US20140147972A1 Multi-Dimensional Integrated Circuit Structures and Methods of Forming the Same Public/Granted day:2014-05-29
Information query
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