Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14078653Application Date: 2013-11-13
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Publication No.: US09054106B2Publication Date: 2015-06-09
- Inventor: Ching-Hung Kao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/14 ; H01L23/522 ; H01L27/146 ; H01L21/768

Abstract:
A semiconductor structure and a method for manufacturing the same are provided. A semiconductor structure includes a device substrate, a conductive film, a dielectric film and a conductive plug. The device substrate includes a semiconductor substrate and a conductive structure on an active surface of the semiconductor substrate. The device substrate has a substrate opening passing through the semiconductor substrate and exposing the conductive structure. The conductive film, the conductive plug and the dielectric film between the conductive film and the conductive plug are disposed in the substrate opening.
Public/Granted literature
- US20150129942A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-05-14
Information query
IPC分类: