Invention Grant
US09054120B2 Semiconductor device, semiconductor device design method, semiconductor device design apparatus, and program
有权
半导体器件，半导体器件设计方法，半导体器件设计器件和程序
- Patent Title: Semiconductor device, semiconductor device design method, semiconductor device design apparatus, and program
- Patent Title (中): 半导体器件，半导体器件设计方法，半导体器件设计器件和程序
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Application No.: US14229090Application Date: 2014-03-28
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Publication No.: US09054120B2Publication Date: 2015-06-09
- Inventor: Masafumi Tomoda , Masayuki Tsukuda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-101656 20110428
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L23/58 ; H01L23/50 ; H01L23/528 ; H01L23/00 ; H01L23/538
Abstract:
A semiconductor device includes a semiconductor chip, the semiconductor chip including a substrate, a multilayer interconnect layer formed over the substrate, an outer peripheral cell column disposed along an edge of the substrate in a plan view, the outer peripheral cell column having at least one first I/O cell, and an inner peripheral cell column formed at an inner peripheral side of the outer peripheral cell column, the inner peripheral cell column having at least one second I/O cell.
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