Invention Grant
- Patent Title: Vertical MOSFET electrostatic discharge device
- Patent Title (中): 垂直MOSFET静电放电装置
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Application No.: US13281293Application Date: 2011-10-25
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Publication No.: US09054131B2Publication Date: 2015-06-09
- Inventor: Jeng-Hsing Jang , Yi-Nan Chen , Hsien-Wen Liu
- Applicant: Jeng-Hsing Jang , Yi-Nan Chen , Hsien-Wen Liu
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/66 ; H01L27/02 ; H01L21/8234 ; H01L29/423 ; H01L29/06
Abstract:
A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each drain region, and a source region surrounding and disposed under the recessed gates and the electrostatic discharge implant regions.
Public/Granted literature
- US20130099309A1 VERTICAL MOSFET ELECTROSTATIC DISCHARGE DEVICE Public/Granted day:2013-04-25
Information query
IPC分类:
