Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor device
- Patent Title (中): 半导体器件和半导体器件的制造方法
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Application No.: US13930401Application Date: 2013-06-28
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Publication No.: US09054132B2Publication Date: 2015-06-09
- Inventor: Mitsuru Sato , Masaru Kito , Megumi Ishiduki , Ryota Katsumata
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-148617 20120702
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L27/115 ; H01L29/792 ; H01L29/06
Abstract:
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The second insulating film seals the hole near an interface of the insulating layer and the select gate. The second insulating film is provided on a side wall of the channel body with a space left in the hole above the select gate. The method can include burying a semiconductor film in the space, in addition, forming a conductive film in contact with the channel body.
Public/Granted literature
- US20140001544A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2014-01-02
Information query
IPC分类:
