Invention Grant
- Patent Title: Semiconductor device with diagonal conduction path
- Patent Title (中): 具有对角导电路径的半导体器件
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Application No.: US13605214Application Date: 2012-09-06
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Publication No.: US09054149B2Publication Date: 2015-06-09
- Inventor: Xin Lin , Daniel J. Blomberg , Jiangkai Zuo
- Applicant: Xin Lin , Daniel J. Blomberg , Jiangkai Zuo
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Lempia Summerfield Katz LLC
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/66 ; H01L21/225
Abstract:
A method of fabricating a bipolar transistor including emitter and base regions having first and second conductivity types, respectively, includes forming an isolation region at a surface of a semiconductor substrate, the isolation region having an edge that defines a boundary of an active area of the emitter region, and implanting dopant of the second conductivity type through a mask opening to form the base region in the semiconductor substrate. The mask opening spans the edge of the isolation region such that an extent to which the dopant passes through the isolation region varies laterally to establish a variable depth contour of the base region.
Public/Granted literature
- US20140061858A1 Semiconductor Device with Diagonal Conduction Path Public/Granted day:2014-03-06
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