Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14449984Application Date: 2014-08-01
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Publication No.: US09054154B2Publication Date: 2015-06-09
- Inventor: Yuichi Onozawa , Hidenori Takahashi , Takashi Yoshimura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2012-229971 20121017
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/423 ; H01L29/66 ; H01L29/10 ; H01L29/417 ; H01L29/49
Abstract:
A semiconductor device includes a first gate electrode that is provided on a first insulating film along one side wall of a first trench and is provided in a second trench, a shield electrode that is provided on a second insulating film along the other side wall of the first trench and is provided in a third trench, a gate runner that is an extended portion of the second trench, has a portion which is provided on the first gate electrode, and is connected to the first gate electrode, and an emitter polysilicon layer that is an extended portion of the third trench, has a portion which is provided on the shield electrode, and is connected to the shield electrode. The semiconductor device has improved turn-on characteristics with a slight increase in the number of process steps, while preventing increase in costs and reduction in yield.
Public/Granted literature
- US20140339599A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-11-20
Information query
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