Invention Grant
- Patent Title: Strained InGaAs quantum wells for complementary transistors
- Patent Title (中): 用于互补晶体管的应变InGaAs量子阱
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Application No.: US14504559Application Date: 2014-10-02
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Publication No.: US09054169B2Publication Date: 2015-06-09
- Inventor: Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
- Applicant: Brian R. Bennett , John Bradley Boos , Theresa F. Chick , James G. Champlain
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/15 ; H01L31/0352 ; H01L29/36 ; H01L29/66 ; H01L29/10 ; B82Y10/00 ; H01L27/092 ; H01L29/20
Abstract:
An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.
Public/Granted literature
- US20150014745A1 Strained InGaAs Quantum Wells for Complementary Transistors Public/Granted day:2015-01-15
Information query
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