Invention Grant
- Patent Title: Semiconductor device and method for producing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13913021Application Date: 2013-06-07
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Publication No.: US09054174B2Publication Date: 2015-06-09
- Inventor: Digh Hisamoto , Naoki Tega , Kumiko Konishi , Hiroyuki Matsushima
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2012-129460 20120607
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/78 ; H01L29/66 ; H01L29/739 ; H01L29/16 ; H01L29/872 ; H01L21/04 ; H01L29/417 ; H01L29/47 ; H01L29/49 ; H01L29/51 ; H01L29/06
Abstract:
In a MOSFET using a SiC substrate, a source region having low resistance and high injection efficiency is formed without performing a high-temperature heat treatment.A vertical Schottky barrier transistor in which a source region SR on a SiC epitaxial substrate is constituted by a metal material is formed. The source region SR composed of a metal material can be brought into a low resistance state without performing a high-temperature activation treatment. Further, by segregating a conductive impurity DP at an interface between the source region SR composed of a metal material and the SiC epitaxial substrate, the Schottky barrier height can be reduced, and the carrier injection efficiency from the source region SR can be improved.
Public/Granted literature
- US20130328062A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2013-12-12
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