Invention Grant
- Patent Title: Semiconductor device with field electrode and method
- Patent Title (中): 具有场电极和方法的半导体器件
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Application No.: US14068583Application Date: 2013-10-31
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Publication No.: US09054182B2Publication Date: 2015-06-09
- Inventor: Oliver Haeberlen
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L21/283 ; H01L29/40

Abstract:
A semiconductor device with a field electrode and method. One embodiment provides a controllable semiconductor device including a control electrode for controlling the semiconductor device and a field electrode. The field electrode includes a number of longish segments which extend in a first lateral direction and which run substantially parallel to one another. The control electrode includes a number of longish segments extending in a second lateral direction and running substantially parallel to one another, wherein the first lateral direction is different from the second lateral direction.
Public/Granted literature
- US20140054697A1 SEMICONDUCTOR DEVICE WITH FIELD ELECTRODE AND METHOD Public/Granted day:2014-02-27
Information query
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