Invention Grant
- Patent Title: Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor
- Patent Title (中): 金属氧化物半导体场效应晶体管
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Application No.: US13940751Application Date: 2013-07-12
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Publication No.: US09054183B2Publication Date: 2015-06-09
- Inventor: Leonid Fursin , Xueqing Li
- Applicant: Leonid Fursin , Xueqing Li
- Applicant Address: US NJ Monmouth Junction
- Assignee: United Silicon Carbide, Inc.
- Current Assignee: United Silicon Carbide, Inc.
- Current Assignee Address: US NJ Monmouth Junction
- Agency: Baker & Hostetler LLP
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/265 ; H01L29/423
Abstract:
The present invention provides AccuFETs with single or dual accumulation channels and methods for manufacturing the same. The present invention also provides for products produced by the methods of the present invention and for apparatuses used to perform the methods of the present invention.
Public/Granted literature
- US20140015036A1 TRENCHED AND IMPLANTED ACCUMULATION MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR Public/Granted day:2014-01-16
Information query
IPC分类:
