Invention Grant
US09054186B2 III-V compound semiconductor device having metal contacts and method of making the same
有权
具有金属触点的III-V族化合物半导体器件及其制造方法
- Patent Title: III-V compound semiconductor device having metal contacts and method of making the same
- Patent Title (中): 具有金属触点的III-V族化合物半导体器件及其制造方法
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Application No.: US14499308Application Date: 2014-09-29
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Publication No.: US09054186B2Publication Date: 2015-06-09
- Inventor: Richard Kenneth Oxland
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L29/45 ; H01L27/06 ; H01L21/285 ; H01L23/485 ; H01L23/532 ; H01L29/786 ; H01L29/49 ; H01L29/205
Abstract:
A semiconductor device comprises a semiconductor substrate; a channel layer of at least a first III-V semiconductor compound above the semiconductor substrate; a gate stack structure above a first portion of the channel layer; a source region and a drain region comprising at least a second III-V semiconductor compound above a second portion of the channel layer; and a first metal contact structure above the S/D regions comprising a first metallic contact layer contacting the S/D regions. The first metallic contact layer comprises at least one metal-III-V semiconductor compound.
Public/Granted literature
- US20150014792A1 III-V COMPOUND SEMICONDUCTOR DEVICE HAVING METAL CONTACTS AND METHOD OF MAKING THE SAME Public/Granted day:2015-01-15
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