Invention Grant
US09054196B2 Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn
有权
包含由In，Ga和Zn组成的氧化物烧结体的溅射靶
- Patent Title: Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn
- Patent Title (中): 包含由In，Ga和Zn组成的氧化物烧结体的溅射靶
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Application No.: US14116328Application Date: 2012-05-01
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Publication No.: US09054196B2Publication Date: 2015-06-09
- Inventor: Masayuki Itose , Mami Nishimura , Hirokazu Kawashima , Misa Sunagawa , Masashi Kasami , Koki Yano
- Applicant: Masayuki Itose , Mami Nishimura , Hirokazu Kawashima , Misa Sunagawa , Masashi Kasami , Koki Yano
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2011-105721 20110510
- International Application: PCT/JP2012/002944 WO 20120501
- International Announcement: WO2012/153494 WO 20121115
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; C04B35/01 ; C04B35/453 ; C04B35/626 ; C04B35/645 ; C23C14/08 ; C23C14/34 ; H01L29/26 ; H01L21/02
Abstract:
A thin film transistor including an active layer, and has a field-effect mobility of 25 cm2/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58≦In/(In+Ga+Zn)≦0.68 and 0.15
Public/Granted literature
- US20140084289A1 THIN-FILM TRANSISTOR Public/Granted day:2014-03-27
Information query
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