Invention Grant
- Patent Title: Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus
- Patent Title (中): 薄膜晶体管，其制造方法，显示单元和电子设备
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Application No.: US13738540Application Date: 2013-01-10
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Publication No.: US09054204B2Publication Date: 2015-06-09
- Inventor: Yoshihiro Oshima , Takashige Fujimori , Yasunobu Hiromasu , Yasuhiro Terai
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2012-009913 20120120; JP2012-071028 20120327
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L27/12 ; H01L21/84 ; H01L29/786 ; H01L29/66
Abstract:
There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (AlXOY, where 0
Public/Granted literature
- US20130187164A1 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS Public/Granted day:2013-07-25
Information query
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