Invention Grant
- Patent Title: FinFET with metal gate stressor
- Patent Title (中): FinFET与金属栅应力
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Application No.: US14502925Application Date: 2014-09-30
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Publication No.: US09054213B2Publication Date: 2015-06-09
- Inventor: Andrew Joseph Kelly , Yasutoshi Okuno , Pei-Shan Chien , Wei-Hsiung Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L21/285
Abstract:
A gate stressor for a fin field effect transistor (FinFET) device is provided. The gate stressor includes a floor, a first stressor sidewall, and a second stressor sidewall. The floor is formed on a first portion of a gate layer. The gate layer is disposed above a shallow trench isolation (STI) region. The first stressor sidewall formed on a second portion of the gate layer. The second portion of the gate layer is disposed on sidewalls of a fin. The second stressor sidewall formed on the third portion of the gate layer. The third portion of the gate layer is disposed on sidewalls of a structure spaced apart from the fin. The first stressor side wall and the second stressor sidewall do not exceed a height of the fin.
Public/Granted literature
- US20150056774A1 FinFET with Metal Gate Stressor Public/Granted day:2015-02-26
Information query
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