Invention Grant
US09054219B1 Semiconductor devices having fin structures and fabrication methods thereof
有权
具有翅片结构的半导体器件及其制造方法
- Patent Title: Semiconductor devices having fin structures and fabrication methods thereof
- Patent Title (中): 具有翅片结构的半导体器件及其制造方法
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Application No.: US14173570Application Date: 2014-02-05
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Publication No.: US09054219B1Publication Date: 2015-06-09
- Inventor: Thomas Hoffmann , Scott E. Thompson
- Applicant: SuVolta, Inc.
- Applicant Address: JP Kuwana
- Assignee: Mie Fujitsu Semiconductor Limited
- Current Assignee: Mie Fujitsu Semiconductor Limited
- Current Assignee Address: JP Kuwana
- Agency: Baker Botts L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/8234 ; H01L21/336 ; H01L21/8238
Abstract:
A method of fabricating semiconductor devices includes providing a semiconducting substrate. The method also includes defining a heavily doped region at a surface of the semiconducting substrate in at least one area of the semiconducting substrate, where the heavily doped region includes a heavily doped layer having a doping concentration greater than a doping concentration of the semiconducting substrate. The method also includes forming an additional layer of semiconductor material on the semiconducting substrate, the additional layer comprising a substantially undoped layer. The method further includes applying a first removal process to the semiconducting substrate to define an unetched portion and an etched portion, where the unetched portion defines a fin structure, and the etched portion extends through the additional layer, and then isolating the fin structure from other structures.
Information query
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