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US09054231B2 Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same 有权
使用组合半导体器件制造的半导体器件的制造方法

Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same
Abstract:
A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.
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