Invention Grant
- Patent Title: Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same
- Patent Title (中): 使用组合半导体器件制造的半导体器件的制造方法
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Application No.: US13992941Application Date: 2011-06-30
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Publication No.: US09054231B2Publication Date: 2015-06-09
- Inventor: Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
- Applicant: Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0126218 20101210
- International Application: PCT/KR2011/004776 WO 20110630
- International Announcement: WO2012/077884 WO 20120614
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L33/50 ; H01L23/00 ; H01L33/48

Abstract:
A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.
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