Invention Grant
US09054237B2 Interdigitated back contact silicon solar cells fabrication using diffusion barriers
有权
使用扩散阻挡层的交错反接触硅太阳能电池制造
- Patent Title: Interdigitated back contact silicon solar cells fabrication using diffusion barriers
- Patent Title (中): 使用扩散阻挡层的交错反接触硅太阳能电池制造
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Application No.: US12954299Application Date: 2010-11-24
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Publication No.: US09054237B2Publication Date: 2015-06-09
- Inventor: Kenta Nakayashiki , Baomin Xu
- Applicant: Kenta Nakayashiki , Baomin Xu
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Bever, Hoffman & Harms, LLP
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/18 ; H01L31/068

Abstract:
Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.
Public/Granted literature
- US20110070676A1 Interdigitated Back Contact Silicon Solar Cells Fabrication Using Diffusion Barriers Public/Granted day:2011-03-24
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