Invention Grant
- Patent Title: Group III nitride based quantum well light emitting device structures with an indium containing capping structure
- Patent Title (中): 具有含铟封端结构的III族氮化物基量子阱发光器件结构
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Application No.: US14015466Application Date: 2013-08-30
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Publication No.: US09054253B2Publication Date: 2015-06-09
- Inventor: Michael John Bergmann , David Todd Emerson
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, PA
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L21/02 ; H01L33/32 ; B82Y20/00
Abstract:
Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
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