Invention Grant
US09054261B2 Photodiode device and method for production thereof 有权
光电二极管装置及其制造方法

Photodiode device and method for production thereof
Abstract:
The photodiode device has an electrically conductive cathode layer (3) at a photodiode layer (4) composed of a semiconductor material. Doped anode regions (5) are situated at a top side of the photodiode layer facing away from the cathode layer. A trench (14) subdivides the photodiode layer. A conductor layer (7) is arranged in or at the trench and electrically conductively connects the cathode layer with a cathode connection (11). Anode connections (12) are electrically conductively connected with the anode regions.
Public/Granted literature
Information query
Patent Agency Ranking
0/0