Invention Grant
- Patent Title: Photodiode device and method for production thereof
- Patent Title (中): 光电二极管装置及其制造方法
-
Application No.: US13981302Application Date: 2012-01-24
-
Publication No.: US09054261B2Publication Date: 2015-06-09
- Inventor: Jordi Teva , Franz Schrank
- Applicant: Jordi Teva , Franz Schrank
- Applicant Address: AT Unterpremstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: DE102011009373 20110125
- International Application: PCT/EP2012/051033 WO 20120124
- International Announcement: WO2012/101116 WO 20120802
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L31/101 ; H01L27/146 ; H01L31/0224

Abstract:
The photodiode device has an electrically conductive cathode layer (3) at a photodiode layer (4) composed of a semiconductor material. Doped anode regions (5) are situated at a top side of the photodiode layer facing away from the cathode layer. A trench (14) subdivides the photodiode layer. A conductor layer (7) is arranged in or at the trench and electrically conductively connects the cathode layer with a cathode connection (11). Anode connections (12) are electrically conductively connected with the anode regions.
Public/Granted literature
- US20140021572A1 PHOTODIODE DEVICE AND METHOD FOR PRODUCTION THEREOF Public/Granted day:2014-01-23
Information query
IPC分类: