Invention Grant
US09054268B2 Method for manufacturing absorber layer of thin film solar cell using MOCVD
有权
使用MOCVD制造薄膜太阳能电池吸收层的方法
- Patent Title: Method for manufacturing absorber layer of thin film solar cell using MOCVD
- Patent Title (中): 使用MOCVD制造薄膜太阳能电池吸收层的方法
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Application No.: US13790481Application Date: 2013-03-08
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Publication No.: US09054268B2Publication Date: 2015-06-09
- Inventor: Hwen-Fen Hong , Hou-Ying Huang , Hwa-Yuh Shin
- Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- Applicant Address: TW Longtan Township, Taoyuan County
- Assignee: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- Current Assignee: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- Current Assignee Address: TW Longtan Township, Taoyuan County
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101136969A 20121005
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/20 ; H01L21/36 ; H01L31/18 ; H01L21/02 ; H01L31/032 ; C23C16/30 ; C23C16/448 ; C23C16/56
Abstract:
A method for manufacturing an absorber layer of thin film solar cells is revealed. Firstly vapors of different metal-organic sources are generated in a plurality of containers used for mounting different metal-organic sources. Then the vapors of the metal-organic sources are mixed with a carrier gas and are filled into a reaction together with a reaction gas chamber through pipelines. Next the metals and the compounds are deposited on a substrate in the reaction chamber to form an absorber layer of a thin film solar cell. A flow rate of each metalorganic vapors filled into the reaction chamber is controlled by a mass flow controller respectively.
Public/Granted literature
- US20140099749A1 METHOD FOR MANUFACTURING ABSORBER LAYER OF THIN FILM SOLAR CELL Public/Granted day:2014-04-10
Information query
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