Invention Grant
- Patent Title: Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the same
- Patent Title (中): 具有应用波长转换材料的半导体发光器件及其形成方法
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Application No.: US12976769Application Date: 2010-12-22
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Publication No.: US09054282B2Publication Date: 2015-06-09
- Inventor: Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
- Applicant: Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/50 ; H01L33/20

Abstract:
A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
Public/Granted literature
Information query
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