Invention Grant
- Patent Title: Semiconductor device having diode and method of forming the same
- Patent Title (中): 具有二极管的半导体器件及其形成方法
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Application No.: US14096055Application Date: 2013-12-04
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Publication No.: US09054296B2Publication Date: 2015-06-09
- Inventor: Sea-Phyo Kim , Dong-Bok Lee , Chan-Min Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0000778 20130103; KR10-2013-0008164 20130124
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L45/00 ; H01L27/24
Abstract:
A semiconductor device includes a conductive line, a diode on the conductive line, one or more insulating patterns adjacent to diode, and a data storage region coupled to the diode. An upper surface of the diode is between the one or more insulating patterns and the data storage region. The data storage region may include a phase-change region, and the diode may taper in width between two insulating patterns in one arrangement.
Public/Granted literature
- US20140183435A1 SEMICONDUCTOR DEVICE HAVING DIODE AND METHOD OF FORMING THE SAME Public/Granted day:2014-07-03
Information query
IPC分类:
