Invention Grant
US09054330B2 Stable and all solution processable quantum dot light-emitting diodes
有权
稳定和全解决方案的量子点发光二极管
- Patent Title: Stable and all solution processable quantum dot light-emitting diodes
- Patent Title (中): 稳定和全解决方案的量子点发光二极管
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Application No.: US13382340Application Date: 2010-07-07
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Publication No.: US09054330B2Publication Date: 2015-06-09
- Inventor: Lei Qian , Ying Zheng , Jiangeng Xue , Paul H. Holloway
- Applicant: Lei Qian , Ying Zheng , Jiangeng Xue , Paul H. Holloway
- Applicant Address: US FL Gainesville
- Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
- Current Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
- Current Assignee Address: US FL Gainesville
- Agency: Saliwanchik, Lloyd & Eisenschenk
- International Application: PCT/US2010/041208 WO 20100707
- International Announcement: WO2011/005859 WO 20110113
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H01L51/52

Abstract:
Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.
Public/Granted literature
- US20120138894A1 STABLE AND ALL SOLUTION PROCESSABLE QUANTUM DOT LIGHT-EMITTING DIODES Public/Granted day:2012-06-07
Information query
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