Invention Grant
- Patent Title: Integrated micro-plasma limiter
- Patent Title (中): 集成微型等离子体限制器
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Application No.: US13865921Application Date: 2013-04-18
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Publication No.: US09054500B2Publication Date: 2015-06-09
- Inventor: Patty Chang-Chien , Kelly Jill Hennig , Xianglin Zeng , Jeffrey M. Yang
- Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
- Applicant Address: US VA Falls Church
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US VA Falls Church
- Agency: Miller IP Group, PLC
- Agent John A. Miller
- Main IPC: H01T4/16
- IPC: H01T4/16 ; H03G11/00 ; H01P1/14 ; H01L23/60

Abstract:
A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The plasma limiter includes a signal substrate and a trigger substrate defining a hermetically sealed cavity therebetween in which is encapsulated an ionizable gas. The signal substrate includes a signal line within the cavity and the trigger substrate includes at least one trigger probe extending from the trigger substrate towards the transmission line. If a signal propagating on the transmission line exceeds a power threshold, the gas within the cavity is ionized creating a conduction path between the transmission line and the trigger probe that draws off the high power current.
Public/Granted literature
- US20130321969A1 INTEGRATED MICRO-PLASMA LIMITER Public/Granted day:2013-12-05
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