Invention Grant
- Patent Title: Low drop diode equivalent circuit
- Patent Title (中): 低压二极管等效电路
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Application No.: US13790075Application Date: 2013-03-08
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Publication No.: US09054585B2Publication Date: 2015-06-09
- Inventor: Bharadwaj Amrutur , Laxmi Karthikeyan
- Applicant: Department of Electronics and Information Technology , Indian Institute of Science
- Applicant Address: IN New Delhi IN Bangalore
- Assignee: Department of Electronics and Information Technology,Indian Institute of Science
- Current Assignee: Department of Electronics and Information Technology,Indian Institute of Science
- Current Assignee Address: IN New Delhi IN Bangalore
- Agency: The Webb Law Firm
- Priority: IN4639/CHE/2012 20121106
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H02M7/217 ; H02M7/219

Abstract:
Embodiments of the disclosure relate to a low drop diode equivalent circuit. Piezoelectric device based vibration energy harvesting requires a rectifier for conversion of input ac to usable dc form. Power loss due to diode drop in rectifier is a significant fraction of the already low levels of harvested power. The low-drop-diode equivalent can replace the rectifier diodes and minimize power loss. The diode equivalent mimics a diode using linear region operated MOSFET. The diode equivalent is powered directly from input signal and requires no additional power supply for its control. Power used by the control circuit is kept at a value which gives an overall output power improvement. The diode equivalent replaces the four diodes in a full wave bridge rectifier, which is the basic full-wave rectifier and is a part of the more advanced rectifiers like switch-only and bias-flip rectifiers.
Public/Granted literature
- US20140126260A1 Low Drop Diode Equivalent Circuit Public/Granted day:2014-05-08
Information query
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