Invention Grant
- Patent Title: Bias current circuit and semiconductor integrated circuit
- Patent Title (中): 偏置电流电路和半导体集成电路
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Application No.: US14016178Application Date: 2013-09-02
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Publication No.: US09054633B2Publication Date: 2015-06-09
- Inventor: Yusuke Niki , Daisuke Miyashita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-009229 20130122
- Main IPC: H03L1/00
- IPC: H03L1/00 ; H03B5/04 ; H03L7/099
Abstract:
A bias current circuit controls an oscillator that generates an oscillation signal of a frequency corresponding to an input current. The circuit includes a part that detects fluctuation of a control current for variably controlling the frequency of the oscillation signal and a part that generates an input current in which a fluctuation component of the control current is canceled using a current for cancelling the detected fluctuation of the control current.
Public/Granted literature
- US20140203880A1 BIAS CURRENT CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2014-07-24
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