Invention Grant
US09054695B2 Technique to realize high voltage IO driver in a low voltage BiCMOS process
有权
在低电压BiCMOS工艺中实现高压IO驱动器的技术
- Patent Title: Technique to realize high voltage IO driver in a low voltage BiCMOS process
- Patent Title (中): 在低电压BiCMOS工艺中实现高压IO驱动器的技术
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Application No.: US14043535Application Date: 2013-10-01
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Publication No.: US09054695B2Publication Date: 2015-06-09
- Inventor: Samiran Dasgupta , Devraj Matharampallil Rajagopal
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Frank D. Cimino
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03K19/018

Abstract:
An IO circuit capable of high voltage signaling in a low voltage BiCMOS process. The IO circuit includes a voltage rail generator circuit that receives a reference voltage and generates a voltage rail supply. A BJT (bi-polar junction transistor) buffer circuit is coupled to the voltage rail generator circuit and a pad. The BJT buffer circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit receives the voltage rail supply. The pull-down circuit is coupled to the pull-up circuit. The pad is coupled to the pull-up circuit and the pull-down circuit.
Public/Granted literature
- US20150091616A1 TECHNIQUE TO REALIZE HIGH VOLTAGE IO DRIVER IN A LOW VOLTAGE BICMOS PROCESS Public/Granted day:2015-04-02
Information query
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