Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14297253Application Date: 2014-06-05
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Publication No.: US09054701B1Publication Date: 2015-06-09
- Inventor: Toshiki Seshita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-250077 20131203
- Main IPC: H01P1/15
- IPC: H01P1/15 ; H03K17/16 ; H01P1/10

Abstract:
A semiconductor device includes a switching unit that is provided on a substrate and controls selection of a high-frequency signal, a low-frequency circuit that is provided on the substrate and processes signals having a frequency lower than that of the switching unit, a first ground portion connected to a ground node of the low-frequency circuit, a ground conductor provided on the substrate, connected to the first ground portion at a first connection position, and connected to the ground node of the switching unit at a second connection position, and a second ground portion connected to the ground conductor, the second ground portion being closer to the second connection position than the first connection position.
Public/Granted literature
- US20150155864A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-06-04
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