Invention Grant
US09054704B2 Method, system, and apparatus for efficiently driving a transistor with a booster in voltage supply
有权
用于在电压供应中用升压器有效驱动晶体管的方法，系统和装置
- Patent Title: Method, system, and apparatus for efficiently driving a transistor with a booster in voltage supply
- Patent Title (中): 用于在电压供应中用升压器有效驱动晶体管的方法，系统和装置
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Application No.: US14299920Application Date: 2014-06-09
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Publication No.: US09054704B2Publication Date: 2015-06-09
- Inventor: Yunfeng Liang
- Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/22 ; H03K17/0412 ; H03K17/78 ; H03K17/687
Abstract:
A method, system, and apparatus for driving a Silicon Carbide (SiC) Junction Field Effect Transistor (JFET) are provided. A boosting capacitor is used in combination with two drivers to efficiently provide a boosting current to the SiC JFET and then a holding current to the SiC JFET. The boosting capacitor, upon discharge, creates the boosting current and once discharged the holding current is provided by one of the first and second drivers.
Public/Granted literature
- US20140285242A1 METHOD, SYSTEM, AND APPARATUS FOR EFFICIENTLY DRIVING A TRANSISTOR WITH A BOOSTER IN VOLTAGE SUPPLY Public/Granted day:2014-09-25
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