Invention Grant
US09054713B2 Semiconductor device generating internal clock signal having higher frequency than that of input clock signal
有权
产生具有比输入时钟信号频率高的内部时钟信号的半导体器件
- Patent Title: Semiconductor device generating internal clock signal having higher frequency than that of input clock signal
- Patent Title (中): 产生具有比输入时钟信号频率高的内部时钟信号的半导体器件
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Application No.: US13959119Application Date: 2013-08-05
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Publication No.: US09054713B2Publication Date: 2015-06-09
- Inventor: Katsuhiro Kitagawa , Hiroki Takahashi
- Applicant: ELPIDA MEMORY, INC.
- Applicant Address: LU Luxembourg
- Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee: PS4 LUXCO S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Priority: JP2012-174294 20120806
- Main IPC: H03L7/00
- IPC: H03L7/00 ; H03L7/08 ; H03L7/081 ; H03L7/22 ; G11C7/22 ; G11C11/4076 ; G11C29/12 ; G11C29/14

Abstract:
Disclosed herein is a device that includes: a plurality of delay circuits each including an input node, an output node, a first power node and a second power node, and a control circuit. The delay circuits are coupled in series with the input node of a leading delay circuit receiving a first clock signal and the output node of a last delay circuit producing a second clock signal. The control circuit coupled to receive the first and second clock signals to control an operating voltage supplied between the first and second power lines. The first power nodes of the delay circuits are connected in common to the first power line, and the second power nodes the delay circuits are connected in common to the second power line.
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