Invention Grant
- Patent Title: Cavity based packaging for MEMS devices
- Patent Title (中): MEMS器件的腔体封装
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Application No.: US14018091Application Date: 2013-09-04
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Publication No.: US09061885B2Publication Date: 2015-06-23
- Inventor: Lisa H. Karlin , Lianjun Liu , Alex P. Pamatat , Paul M. Winebarger
- Applicant: Lisa H. Karlin , Lianjun Liu , Alex P. Pamatat , Paul M. Winebarger
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC
- Current Assignee: FREESCALE SEMICONDUCTOR, INC
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- Main IPC: H01L33/48
- IPC: H01L33/48 ; H01L33/62 ; B81B3/00 ; B81B7/00 ; H01L21/50 ; H01L21/78 ; H01L23/04 ; H01L33/54 ; H01L23/00
Abstract:
A wafer structure (88) includes a device wafer (20) and a cap wafer (60). Semiconductor dies (22) on the device wafer (20) each include a microelectronic device (26) and terminal elements (28, 30). Barriers (36, 52) are positioned in inactive regions (32, 50) of the device wafer (20). The cap wafer (60) is coupled to the device wafer (20) and covers the semiconductor dies (22). Portions (72) of the cap wafer (60) are removed to expose the terminal elements (28, 30). The barriers (36, 52) may be taller than the elements (28, 30) and function to prevent the portions (72) from contacting the terminal elements (28, 30) when the portions (72) are removed. The wafer structure (88) is singulated to form multiple semiconductor devices (89), each device (89) including the microelectronic device (26) covered by a section of the cap wafer (60) and terminal elements (28, 30) exposed from the cap wafer (60).
Public/Granted literature
- US20140008739A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME Public/Granted day:2014-01-09
Information query
IPC分类:
