Invention Grant
- Patent Title: Mask structure
- Patent Title (中): 面膜结构
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Application No.: US13801945Application Date: 2013-03-13
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Publication No.: US09069253B2Publication Date: 2015-06-30
- Inventor: Yu-Mei Ni , Chun-Yen Huang , Pei-Cheng Fan
- Applicant: Nanya Technology Corp.
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corportion
- Current Assignee: Nanya Technology Corportion
- Current Assignee Address: TW Taoyuan
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/24

Abstract:
A mask structure, including a substrate; an absorber layer formed on the substrate; and a patterned reflection layer formed on the absorber layer. Optionally, the mask structure may further include a buffer layer, a conductive coating, or combinations thereof. The buffer layer may be formed between the absorber layer and the reflection layer, and the conductive coating may be formed at a back side of the substrate.
Public/Granted literature
- US20140272674A1 MASK STRUCTURE Public/Granted day:2014-09-18
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