Invention Grant
- Patent Title: ESD protection circuit cell
- Patent Title (中): ESD保护电路单元
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Application No.: US13339410Application Date: 2011-12-29
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Publication No.: US09069924B2Publication Date: 2015-06-30
- Inventor: Bo-Ting Chen
- Applicant: Bo-Ting Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H02H9/00
- IPC: H02H9/00 ; G06F17/50 ; H01L27/02

Abstract:
A protection cell for a cell library. The protection cell defines a protection circuit for an IC having a driving device with a first supply voltage Vdd1 and an output, and a driven device having an input and a second supply voltage Vdd2. The protection circuit includes a first device from the group consisting of a P-diode and a gate-Vdd PMOS. The first device is coupled between a first power bus connected to Vdd2 and the input of the driven device. The input of the driven device is coupled by way of a resistor to the output of the driving device. A second device corresponding to the first device is provided, from the group consisting of an N-diode and a grounded gate NMOS. The second device is coupled between the input of the driven device and a ground bus.
Public/Granted literature
- US20130170080A1 ESD PROTECTION CIRCUIT CELL Public/Granted day:2013-07-04
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