A light emitting device includes a first section and a second section. The first section includes a first semiconductor layer doped with a first dopant, a second semiconductor layer doped with a second dopant, and a first active layer between the first and second semiconductor layers, and the second section includes a third semiconductor layer disposed on the first section, and the third semiconductor layer having an exposed region, a fourth semiconductor layer disposed on the third semiconductor layer except for the exposed region, and a second active layer between the third and fourth semiconductor layers, a first electrode disposed on the first semiconductor layer, a second electrode disposed on the fourth semiconductor layer and a third electrode inserted into a hole in the exposed region and disposed on the exposed region and the second semiconductor layer, the third electrode electrically connected to the second and third semiconductor layers.