Invention Grant
- Patent Title: Semiconductor device and driving method thereof
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US13442995Application Date: 2012-04-10
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Publication No.: US09070776B2Publication Date: 2015-06-30
- Inventor: Hidetomo Kobayashi
- Applicant: Hidetomo Kobayashi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2011-091577 20110415; JP2011-108882 20110514
- Main IPC: G11C5/14
- IPC: G11C5/14 ; H01L29/786 ; H01L27/12

Abstract:
The circuit includes a first wiring for supplying a power supply potential to a signal processing circuit, a transistor for controlling electrical connection between the first wiring and a second wiring for supplying the a power supply potential, and a transistor for determining whether or not the first wiring is grounded. At least one of the two transistors is a transistor whose channel is formed in the oxide semiconductor layer. This makes it possible to reduce power consumption due to cutoff current of at least one of the two transistors.
Public/Granted literature
- US20120262983A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF Public/Granted day:2012-10-18
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