Invention Grant
- Patent Title: Photonic device
- Patent Title (中): 光子器件
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Application No.: US13924487Application Date: 2013-06-21
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Publication No.: US09070815B2Publication Date: 2015-06-30
- Inventor: Kwang-hyun Lee , Dong-jae Shin , Ho-chul Ji
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2012-0092543 20120823
- Main IPC: G02F1/01
- IPC: G02F1/01 ; G02B26/00 ; G02F1/03 ; G02B26/08 ; G02F1/035 ; G02F1/295 ; H01L31/105 ; G02F1/015 ; G02F1/025 ; G02F1/225

Abstract:
A photonic device is provided. The photonic device includes: a semiconductor layer including first and second regions; an insulating layer covering the semiconductor layer; and first and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions. The first plug is in a rectifying contact with the first region, and the second plug is in an ohmic contact with the second region.
Public/Granted literature
- US20140055838A1 PHOTONIC DEVICE Public/Granted day:2014-02-27
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