A high frequency power amplifier includes an FET chip, a wire connected at a first end to the FET chip, an input-side matching circuit substrate, a resistive element on the input-side matching circuit substrate and connected in series with the FET chip, a transmission portion of a conductive material on the input-side matching circuit substrate, in contact with one end of the resistive element, and connected to an input electrode, a wire connection portion of a conductive material on the input-side matching circuit substrate, in contact with a second end of the resistive element, and connected to a second end of the wire, and a shorting portion of a conductive material having a smaller width than the resistive element and on the resistive element, connecting the transmission portion to the wire connection portion.