Invention Grant
US09073745B2 MEMS pressure sensor and manufacturing method therefor 有权
MEMS压力传感器及其制造方法

  • Patent Title: MEMS pressure sensor and manufacturing method therefor
  • Patent Title (中): MEMS压力传感器及其制造方法
  • Application No.: US14004816
    Application Date: 2012-02-23
  • Publication No.: US09073745B2
    Publication Date: 2015-07-07
  • Inventor: Lianjun Liu
  • Applicant: Lianjun Liu
  • Applicant Address: CN
  • Assignee: MEMSEN ELECTRONICS INC
  • Current Assignee: MEMSEN ELECTRONICS INC
  • Current Assignee Address: CN
  • Agency: Cantor Colburn LLP
  • Priority: CN201110061167 20110315
  • International Application: PCT/CN2012/071493 WO 20120223
  • International Announcement: WO2012/122877 WO 20120920
  • Main IPC: B81B3/00
  • IPC: B81B3/00 B81C1/00 G01L9/00
MEMS pressure sensor and manufacturing method therefor
Abstract:
A Micro Electromechanical System (MEMS) pressure sensor may include a first substrate provided with a sensitive diaphragm of a capacitive pressure sensing unit, an electrical connecting layer and a first bonding layer on a surface of the first substrate; and a second substrate provided with an inter-conductor dielectric layer, a conductor connecting layer in the inter-conductor dielectric layer and/or a second bonding layer on a surface of the second substrate. The second substrate is arranged opposite to the first substrate, and the second substrate is fixedly coupled to the first substrate via the first bonding layer and the second bonding layer; a pattern of the first bonding layer is corresponding to a pattern of the second bonding layer, and both the first bonding layer and the second bonding layer are formed of a conductive material.
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