Invention Grant
- Patent Title: MEMS pressure sensor and manufacturing method therefor
- Patent Title (中): MEMS压力传感器及其制造方法
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Application No.: US14005185Application Date: 2012-02-23
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Publication No.: US09073746B2Publication Date: 2015-07-07
- Inventor: Lianjun Liu
- Applicant: Lianjun Liu
- Applicant Address: CN
- Assignee: MEMSEN ELECTRONICS INC
- Current Assignee: MEMSEN ELECTRONICS INC
- Current Assignee Address: CN
- Agency: Cantor Colburn LLP
- Priority: CN201110061456 20110315
- International Application: PCT/CN2012/071488 WO 20120223
- International Announcement: WO2012/122875 WO 20120920
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81B1/00 ; G01L9/00 ; B81C1/00

Abstract:
A Micro Electromechanical System (MEMS) pressure sensor may include a first substrate provided with a sensitive diaphragm of a piezoresistive pressure sensing unit, an electrical connecting diffusion layer and a first bonding layer on a surface of the first substrate; and a second substrate provided with an inter-conductor dielectric layer, a conductor connecting layer in the inter-conductor dielectric layer and/or a second bonding layer on a surface of the second substrate. The second substrate may be arranged opposite to the first substrate, and the second substrate may be fixedly coupled to the first substrate via the first bonding layer and the second bonding layer; the pattern of the first bonding layer is corresponding to the pattern of the second bonding layer, and both the first bonding layer and the second bonding layer may be formed of a conductive material.
Public/Granted literature
- US20140001584A1 MEMS PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR Public/Granted day:2014-01-02
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