Invention Grant
- Patent Title: Low-dopant polycrystalline silicon chunk
- Patent Title (中): 低掺杂多晶硅块
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Application No.: US13710859Application Date: 2012-12-11
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Publication No.: US09073756B2Publication Date: 2015-07-07
- Inventor: Hanns Wochner , Andreas Killinger , Reiner Pech
- Applicant: Wacker Chemie AG
- Applicant Address: DE Munich
- Assignee: Wacker Chemie AG
- Current Assignee: Wacker Chemie AG
- Current Assignee Address: DE Munich
- Agency: Caesar Rivise, PC
- Priority: DE102012200992 20120124
- Main IPC: C01B33/02
- IPC: C01B33/02 ; C01B33/021 ; C01B33/035 ; C01B33/037
Abstract:
The invention provides a polycrystalline silicon chunk having a concentration of 1-50 ppta of boron and 1-50 ppta of phosphorus at the surface.
Public/Granted literature
- US20130189176A1 LOW-DOPANT POLYCRYSTALLINE SILICON CHUNK Public/Granted day:2013-07-25
Information query
