Invention Grant
US09075079B2 Method and structure of an integrated MEMS inertial sensor device using electrostatic quadrature-cancellation
有权
使用静电正交取消的集成MEMS惯性传感器装置的方法和结构
- Patent Title: Method and structure of an integrated MEMS inertial sensor device using electrostatic quadrature-cancellation
- Patent Title (中): 使用静电正交取消的集成MEMS惯性传感器装置的方法和结构
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Application No.: US14297337Application Date: 2014-06-05
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Publication No.: US09075079B2Publication Date: 2015-07-07
- Inventor: Shingo Yoneoka , Sudheer Sridharamurthy , Wenhua Zhang , Te-Hsi Terrence Lee
- Applicant: mCube Inc.
- Applicant Address: US CA San Jose
- Assignee: MCUBE INC.
- Current Assignee: MCUBE INC.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G01P15/13
- IPC: G01P15/13 ; G01C19/5762 ; G01C19/5719 ; G01P15/125 ; G01P15/08 ; G01C19/5712

Abstract:
An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.
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