Invention Grant
- Patent Title: Method and apparatus for testing a semiconductor device
- Patent Title (中): 用于测试半导体器件的方法和装置
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Application No.: US14018653Application Date: 2013-09-05
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Publication No.: US09075101B2Publication Date: 2015-07-07
- Inventor: Jhih Jie Shao , Szu-Chia Huang , Tang-Hsuan Chung , Huan Chi Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R27/22 ; G01R31/26 ; G01R31/27

Abstract:
The present disclosure provides a method for testing a semiconductor device. The method includes providing a testing unit and an electronic circuit coupled to the testing unit and applying a first electrical signal to the testing unit. The method includes sweeping a second electrical signal across a range of values, the second electrical signal supplying power to the electronic circuit, wherein the sweeping is performed while a value of the first electrical signal remains the same. The method includes measuring a third electrical signal during the sweeping, the measured third electrical signal having a range of values that each correspond to one of the values of the second electrical signal. The method includes adopting an optimum value of the second electrical signal that yields a minimum value of the third electrical signal. The method includes testing the testing unit while the second electrical signal is set to the optimum value.
Public/Granted literature
- US20140002127A1 Method and Apparatus for Testing a Semiconductor Device Public/Granted day:2014-01-02
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