Invention Grant
US09075310B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device
有权
图案形成方法,多层抗蚀剂图案,有机溶剂显影用多层膜,抗蚀剂组合物,电子器件的制造方法和电子器件
- Patent Title: Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device
- Patent Title (中): 图案形成方法,多层抗蚀剂图案,有机溶剂显影用多层膜,抗蚀剂组合物,电子器件的制造方法和电子器件
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Application No.: US14261896Application Date: 2014-04-25
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Publication No.: US09075310B2Publication Date: 2015-07-07
- Inventor: Michihiro Shirakawa , Keita Kato , Tadahiro Odani , Atsushi Nakamura , Hidenori Takahashi , Kaoru Iwato
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-236455 20111027
- Main IPC: G03F7/30
- IPC: G03F7/30 ; G03F7/095 ; G03F7/11 ; H01L21/027 ; G03F7/039 ; G03F7/09 ; G03F7/20 ; G03F7/32

Abstract:
A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.
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