Invention Grant
US09075314B2 Photomask blank, photomask, and method for manufacturing photomask blank
有权
光掩模坯料,光掩模以及制造光掩模坯料的方法
- Patent Title: Photomask blank, photomask, and method for manufacturing photomask blank
- Patent Title (中): 光掩模坯料,光掩模以及制造光掩模坯料的方法
-
Application No.: US13944251Application Date: 2013-07-17
-
Publication No.: US09075314B2Publication Date: 2015-07-07
- Inventor: Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto , Morio Hosoya
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Main IPC: G03F1/26
- IPC: G03F1/26 ; G03F1/46 ; G03F1/50 ; G03F1/58 ; G03F1/22 ; G03F1/54 ; H01L21/027

Abstract:
A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.
Public/Granted literature
- US20140057199A1 PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK Public/Granted day:2014-02-27
Information query